FQD7N10LTM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQD7N10LTM
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 2.5 W 100 V Continuous Drain Current (ID):5.8 A 6 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 100 V |
| Length | 6.6 mm |
| Width | 6.1 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 350 mΩ |
| Height | 2.3 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.2604 g |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 5.8 A |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2 V |
| Number of Channels | 1 |
| Input capacitance | 290 pF |
| Continuous Drain Current (ID) | 5.8 A |
| Rds On Max | 350 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Turn-On Delay Time | 9 ns |
| Turn-Off Delay Time | 17 ns |
| Element Configuration | Single |
| Rise Time | 100 ns |
| Gate Charge | 6 nC |
| Drain to Source Resistance | 350 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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